型号 电压/V 电流/A 封装形式 下载 G52YT 650 2 SMA ＝下载＝ G51XT 650 1 SOD123 ＝下载＝ G3S06502A 650 2 TO-220AC ＝下载＝ G3S06502C 650 2 TO-252 ＝下载＝ G3S06502D 650 2 TO-263 ＝下载＝ G3S06502R 650 2 TO-252 ＝...

TP65H050G4WS 650V 50m SuperGaN FET in TO-247 The TP65H050G4WS 650V 50m Gallium Nitride (GaN) FET is a normally-off device built using Transphorms GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage Silico...

TP90H050WS 采用 TO-247 封装的 900V 50m 氮化镓GaN FET TP90H050WS 900V 50m 氮化镓 (GaN) FET 属于常闭型器件。Transphorm氮化镓GaN FET通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷，提供更...

TP65H480G4JSG 650V 480m SuperGaN FET in PQFN56 The TP65H480G4JSG 650V 480m Gallium Nitride (GaN) FET is a normally-off device built using Transphorms Gen IV platform . It combines state-of-the-art high voltage GaN HEMT and low voltage silic...

TP65H300G4LSG 650V 240m GaN FET inPQFN88 The TP65H300G4LSG 650V 240m gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse rec...

TP65H150LSG 600V 150m GaN FET inPQFN88 The TP65H150LSG 650V 150m gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recover...

TP65H070LDG drain FET Click for source FET 采用 PQFN88 封装的 650V 72m 氮化镓GaN FET TP65H070LDG 650V 72m 氮化镓 (GaN) FET 属于常闭型器件。Transphorm氮化镓GaN FET 通过更低的栅极电荷、更快的切换速度和更...

TP65H070LSG source FET Click for drain FET 采用 TO-220 封装的 650V 72m 氮化镓GaN FET TP65H070LSG 650V 72m 氮化镓 (GaN) FET 属于常闭型器件。Transphorm氮化镓GaN FET 通过更低的栅极电荷、更快的切换速度和更...

TP65H050WS 采用 TO-247 封装的 650V 35m 氮化镓GaN FET TP65H050WS 650V 35m 氮化镓 (GaN) FET 属于常闭型器件。Transphorm氮化镓GaN FET通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷，提供更...

TP65H035WS 采用 TO-247 封装的 650V 35m 氮化镓GaN FET TPH3207WS 650V 35m 氮化镓 (GaN) FET 属于常闭型器件。Transphorm氮化镓GaN FET通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷，提供更...