TP65H070LDG 650V 72mΩ 氮化镓 (GaN) FET 属于常闭型器件。Transphorm氮化镓GaN FET 通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷，提供更高的效率，明显超越传统硅 (Si) 器件，具有显著优势。TP65H070LDG 经由共源极封装配置封装在行业标准的 3 引线 PQFN88 内发售。
| VDS (V) 最小值 | 650 |
| V(TR)DSS (V) 最大值 | 800 |
| RDS(on)eff（mΩ）最大值* | 85 |
| QRR (nC) 典型值 | 90 |
| QG (nC) 典型值 | 10 |
| *Reflects both static and dynamic on-resistance | |
关键特性
关键益处
应用说明
AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs
AN0007: PQFN88 Lead-free 2nd Level Soldering Recommendations for Vapor Phase Reflow
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
AN0013: PQFN PCB Landing Pad Design
Design Guides
DG002: 2.3kW High-efficiency 2-phase CRM Boost Converter for Solar Inverters
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files
DG006: 600W DC to DC LLC Design Using GaN FETs | DG006
DG009: 12V/1200W High Frequency LLC Converter Design using GaN FETs | DG009
DG010: Design Analysis of DC-DC Module 50V/40A | DG010
评价套件
Transphorm同时也提供一系列具有不同电路拓扑方案的氮化镓器件评估板
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