TP65H480G4JSG  

650V 480mΩ SuperGaN® FET in PQFN56

The TP65H480G4JSG 650V 480mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H480G4LSG is offered in an industry-standard PQFN56 with a common source package configuration.

Key Features

• JEDEC qualified GaN technology
• Dynamic RDS(on)eff production tested
• Robust design, defined by
• • Intrinsic lifetime tests
  • Wide gate safety margin
  • Transient over-voltage capability
• Very low QRR
• Reduced crossover loss
• RoHS-compliant and Halogen-free packaging

AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
AN0013: PQFN PCB Landing Pad Design
 

DG001: LLC Resonant Tank Design for 3.3kW Electric Vehicle On-board Charger with Wide-range Output Voltage
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files
 

Evaluation Kits

Transphorm offers a number of GaN evaluation platforms in various topologies. The evaluation kit below features the TPH3206PSB GaN FET:

3D Files – PQFN56
 

SPICE Model – TP65H480G4
 

Qualification Report – TP65H480G4JSG

Datasheet – TP65H480G4JSG 650V GaN FET