The TP65H300G4LSG 650V 240mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. The TP65H300G4LSG is offered in an industry-standard 8×8 PQFN with a common source package configuration.
| VDSS (V) min | 650 |
| VDSS(TR) (V) max | 800 |
| RDS(on) (mΩ) max* | 312 |
| Qrr (nC) typ | 23 |
| Qg (nC) typ | 9.6 |
| **Reflects both static and dynamic on-resistance | |
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
AN0013: PQFN PCB Landing Pad Design
Design Guides
DG002: 2.3kW High-efficiency 2-phase CRM Boost Converter for Solar Inverters
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files
Evaluation Kits
Transphorm offers a number of GaN evaluation platforms in various topologies. The evaluation kit below features the TPH3206 GaN FET:
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