TP65H050G4WS  

650V 50mΩ SuperGaN® FET in TO-247

The TP65H050G4WS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance.

Transphorm GaN offers improved efficiency over Silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H050G4WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.

Key Features

• JEDEC qualified GaN technology
• Dynamic RDS(on)eff production tested
• Robust design, defined by
• • Intrinsic lifetime tests
  • Wide gate safety margin
  • Transient over-voltage capability
• Enhanced inrush current capability
• Very low QRR
• Reduced crossover loss
• RoHS-compliant and Halogen-free packaging

DG001: LLC Resonant Tank Design for 3.3kW Electric Vehicle On-board Charger with Wide-range Output Voltage
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files
 

AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications

Evaluation Kits

Transphorm offers a number of GaN evaluation kits in various topologies, providing an easy-to-use platform to investigate the benefits of GaN.

3D Files – TO-247

Datasheet – TP65H050G4BS 650V GaN FET