TP65H035WS 采用 TO-247 封装的 650V 35m 氮化镓GaN FET TPH3207WS 650V 35m 氮化镓 (GaN) FET 属于常闭型器件。Transphorm氮化镓GaN FET通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷，提供更...

TP65H050WSQA 采用 TO-247 封装的 650V 50m 氮化镓 AEC-Q101 Qualified GaN FET TP65H050WSQA 650V 50m 氮化镓 (GaN) FET 属于常闭型器件。Transphorm氮化镓GaN FET通过更低的栅极电荷、更快的切换速度和更小的反向...

TP65H035WSQA 650V 35m AEC-Q101 Qualified GaN FET inTO-247 The TP65H035WSQA 650V 35m Gallium Nitride (GaN) FET is a normally-off device built using Transphorms Gen III platform . It combines state-of-the-art high voltage GaN HEMT and low vol...

TP65H035G4WS 采用 TO-247 封装的 650V 35m 氮化镓GaN FET (SuperGaN ) Review this product TP65H035G4WS 650V 35m 氮化镓 (GaN) FET 属于常闭型器件。Transphorm氮化镓GaN FET通过更低的栅极电荷、更快的切换速度和更...