TP65H035WSQA

650V 35mΩ AEC-Q101 Qualified GaN FET in TO-247

The TP65H035WSQA 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen III platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

The device is also automotive qualified to 175°C, having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H035WSQA is offered in an industry-standard 3 lead TO-247 with a common source package configuration.

Key Features

• JEDEC and AEC-Q101 qualified GaN technology
• Junction temperature rating of 175C
• Dynamic RDS(on)eff production tested
• Robust design, defined by
  • Intrinsic lifetime tests
  • Wide gate safety margin
  • Transient over-voltage capability
• Very low QRR
• Reduced crossover loss
• RoHS-compliant and Halogen-free packaging